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NP70N10KUF
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
60
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
10000
50
40
30
20
10
0
I D = 35 A
Pulsed
V GS = 10 V
1000
100
10
V GS = 0 V
f = 1 MHz
C iss
C oss
C rss
-100
-50
0
50
100
150
200
0.01
0.1
1
10
100
T ch - Channel Temperature - °C
SWITCHING CHARACTERISTICS
V DS - Drain to Source Voltage - V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
90
12
100
t d(off)
t d(on)
V DD = 50 V
V GS = 10 V
R G = 0 Ω
80
70
60
50
V DD = 80 V
50 V
20 V
I D = 70 A
V GS
10
8
6
40
10
t r
30
4
t f
20
V DS
2
10
1
0
0
0.1
1
10
100
0
10
20
30
40
50
1000
I D - Drain Current - A
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
1000
Q G - Gate Charge - nC
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
Pulsed
100
100
10
V GS = 10 V
0V
10
1
di/dt = 100 A/ μ s
V GS = 0 V
0.1
1
0
0.5
1
1.5
0.1
1
10
100
V F(S-D) - Source to Drain Voltage - V
Data Sheet D18040EJ2V0DS
I F – Diode Forward Current - A
5
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